SPB80N06S2L-07 Infineon Technologies, SPB80N06S2L-07 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2L-07
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 150µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 4210pF @ 25V
• Power - Max: 210W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016357; SPB80N06S2L07T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2L-07
GS
P
0.5
0.5
tot
); T
); V
= 210W
p
p
h
= 80 µs
= 80 µs
1
1
j
=25°C
DS
g
1.5
1.5
≥ 2 x I
2
2
f
D
2.5
2.5
x R
3
DS(on)max
3
3.5
3.5
e
c
a
d
b
V GS [V]
4
4
a
b
c
d
e
f
g
h
V
V
V
V
DS
GS
10.0
3.0
3.2
3.5
3.8
4.0
4.5
5.0
5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
110
S
24
20
18
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPP80N06S2L-07
= f (I
V
); T
GS
3.5
c
[V] =
j
3.8
d
=25°C
20
D
fs
20
GS
)
4.0
e
4.5
f
40
40
c
g
5.0
SPB80N06S2L-07
SPP80N06S2L-07
10.0
60
h
60
d
80
2003-05-09
80
A
A
e
I
h
D
I
D
f
g
120
110