SPB80N06S2L-H5 Infineon Technologies, SPB80N06S2L-H5 Datasheet - Page 7

• Manufacturer Part Number: SPB80N06S2L-H5
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-H5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 230µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 6640pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013796; SPB80N06S2LH5T

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
700
500
400
300
200
100
= f (T
V
66
62
60
58
56
54
52
50
D
-60
0
25
= 80 A , V
SPP80N06S2L-H5
= f (T
j
)
-20
D
50
=10 mA
j
)
20
DD
75
= 25 V, R
60
100
100
125
GS
140
= 25 Ω
°C
°C
T
T
j
j
200
175
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N06S2L-H5
20
Gate
D
40 60
= 80 A pulsed
)
0,2
80 100 120 140 160 180
V
SPB80N06S2L-H5
SPP80N06S2L-H5
DS max
0,8 V
2003-05-09
DS max
nC
Q
Gate
210