SPD50N03S2-07 Infineon Technologies, SPD50N03S2-07 Datasheet - Page 5

• Manufacturer Part Number: SPD50N03S2-07
• Description: MOSFET N-CH 30V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD50N03S2-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 85µA
• Gate Charge (qg) @ Vgs: 46.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000016253; SP000077579; SPD50N03S207XT

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
Rev. 2.1
= f (V
120
100
100
A
A
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
DS
SPD50N03S2-07
GS
P
tot
); T
i
); V
= 136W
p
p
1
1
= 80 µs
= 80 µs
j
=25°C
DS
≥ 2 x I
2
2
D
3
x R
3
DS(on)max
4
g
e
c
a
4
h
f
d
b
V
GS
5
a
b
c
d
e
f
g
h
i
[V]
V
V
V
V
DS
GS
10.0
4.2
4.5
4.8
5.0
5.2
5.5
5.8
6.0
5.5
6.5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
S
24
20
18
16
14
12
10
80
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPD50N03S2-07
= f (I
V
); T
GS
5.2
e
10
[V] =
e
j
5.5
=25°C
20
D
f
fs
GS
20
)
g
5.8
30
6.0
40
h
40
10.0
f
i
SPD50N03S2-07
60
50
60
g
80
70
2005-02-14
80
h
i
A
I
A
D
I
D
120
100