SPP80N06S2L-07 Infineon Technologies, SPP80N06S2L-07 Datasheet - Page 5
![MOSFET N-CH 55V 80A TO-220](/photos/22/17/221786/4467716_sml.jpg)
SPP80N06S2L-07
Manufacturer Part Number
SPP80N06S2L-07
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N06S2L-07.pdf
(8 pages)
Specifications of SPP80N06S2L-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 150µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
4210pF @ 25V
Power - Max
210W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000012823
SPP80N06S2L07
SPP80N06S2L07
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPP80N06S2L-07(2N06L07)
Manufacturer:
Vishay
Quantity:
15 000
5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2L-07
GS
P
0.5
0.5
tot
); T
); V
= 210W
p
p
h
= 80 µs
= 80 µs
1
1
j
=25°C
DS
g
1.5
1.5
≥ 2 x I
2
2
f
D
2.5
2.5
x R
3
DS(on)max
3
3.5
3.5
e
c
a
d
b
V GS [V]
4
4
a
b
c
d
e
f
g
h
V
V
V
V
DS
GS
10.0
3.0
3.2
3.5
3.8
4.0
4.5
5.0
5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
110
S
24
20
18
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPP80N06S2L-07
= f (I
V
); T
GS
3.5
c
[V] =
j
3.8
d
=25°C
20
D
fs
20
GS
)
4.0
e
4.5
f
40
40
c
g
5.0
SPB80N06S2L-07
SPP80N06S2L-07
10.0
60
h
60
d
80
2003-05-09
80
A
A
e
I
h
D
I
D
f
g
120
110