SPP80N06S2L-11 Infineon Technologies, SPP80N06S2L-11 Datasheet - Page 6
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SPP80N06S2L-11
Manufacturer Part Number
SPP80N06S2L-11
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N06S2L-11.pdf
(8 pages)
Specifications of SPP80N06S2L-11
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 93µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
158W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013584
SPP80N06S2L11
SPP80N06S2L11
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPP80N06S2L-11
Manufacturer:
INFINEON
Quantity:
35 000
Company:
Part Number:
SPP80N06S2L-11
Manufacturer:
MAXIM
Quantity:
2 300
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
10
36
28
24
20
16
12
8
4
0
-60
4
3
2
0
SPP80N06S2L-11
= f (T
DS
)
-20
D
j
5
GS
)
= 40 A, V
=0V, f=1 MHz
20
10
98%
60
typ
GS
15
= 10 V
100
20
C
C
C
oss
140 °C
iss
rss
V
T
V
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
1.2
0.8
0.4
V
A
SPP80N06S2L-11,SPB80N06S2L-11
2
0
-60
3
2
1
0
0
= f (T j )
SD
SPP80N06S2L-11
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
93 A
DS
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
1.6
465 A
SPI80N06S2L-11
100
2
2004-11-02
2.4
°C
V
V
T
j
SD
180
3