SPB11N60S5 Infineon Technologies, SPB11N60S5 Datasheet - Page 10

• Manufacturer Part Number: SPB11N60S5
• Description: MOSFET N-CH 600V 11A TO-263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60S5

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5.5V @ 500µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012373; SPB11N60S5; SPB11N60S5INTR; SPB11N60S5XT

SPB11N60S5
PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22
Rev. 2.3
2005-07-22
Page 10