MMSF7P03HDR2G ON Semiconductor, MMSF7P03HDR2G Datasheet - Page 2

• Manufacturer Part Number: MMSF7P03HDR2G
• Description: MOSFET P-CH 30V 7A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMSF7P03HDR2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 75.8nC @ 6V
• Input Capacitance (ciss) @ Vds: 1680pF @ 24V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 53.6 ns, 55.2 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 42.7 ns, 15.2 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Negative sign for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
= 0 Vdc, I
= 30 Vdc, V
= 30 Vdc, V
= V
= 10 Vdc, I
= 4.5 Vdc, I
GS
, I
D
D
= 0.25 mAdc)
D
D
= 0.25 mAdc)
GS
GS
= 5.3 Adc)
= 2.0 Adc)
= 0 Vdc)
= 0 Vdc, T
DS
GS
Characteristic
= 15 Vdc, I
J
= ± 20 Vdc, V
= 125°C)
(T
A
(V
(V
(V
D
(I
(I
(I
V
V
(V
= 25°C unless otherwise noted) (Note 2)
S
S
S
= 2.5 Adc)
DD
GS
DD
GS
DS
DS
= 2.3 Adc, V
= 2.3 Adc, V
= 4.9 Adc, V
DS
dI
= 15 Vdc, I
= 15 Vdc, I
= 10 Vdc, I
= 4.5 Vdc, R
= 10 Vdc, R
= 24 Vdc, V
V
S
= 0 Vdc)
f = 1.0 MHz)
GS
T
/dt = 100 A/ms)
J
= 125°C)
= 6.0 Vdc)
http://onsemi.com
MMSF7P03HD
GS
GS
GS
D
D
D
G
G
= 1.0 Adc,
= 1.0 Adc,
= 4.9 Adc,
GS
= 0 Vdc)
= 6.0 W)
= 0 Vdc,
= 0 Vdc,
= 10 W)
= 0 V,
2
V
Symbol
R
V
(BR)DSS
t
t
t
t
I
I
C
Q
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
Q
Q
Q
Q
t
t
t
FS
oss
t
t
t
t
SD
rss
RR
iss
rr
a
b
r
f
r
f
T
1
2
3
Min
1.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.052
1200
23.5
42.7
57.4
53.6
15.2
99.7
55.2
37.9
11.5
0.76
0.61
47.9
Typ
580
160
4.2
7.6
26
42
12
16
27
21
−
−
−
−
−
107.2
199.4
114.8
110.4
1680
Max
85.4
30.6
75.8
100
810
220
1.0
1.2
25
35
50
47
32
−
−
−
−
−
−
−
−
−
−
−
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
mW
nC
mC
pF
ns
ns