MMSF7P03HDR2G ON Semiconductor, MMSF7P03HDR2G Datasheet - Page 7

• Manufacturer Part Number: MMSF7P03HDR2G
• Description: MOSFET P-CH 30V 7A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMSF7P03HDR2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 75.8nC @ 6V
• Input Capacitance (ciss) @ Vds: 1680pF @ 24V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 53.6 ns, 55.2 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 42.7 ns, 15.2 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.00
1.0
0.1
1
1.0E−05
D = 0.5
0.02
0.1
0.0
5
0.0
1
0.2
SINGLE PULSE
1.0E−04
1.0E−03
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 15. Diode Reverse Recovery Waveform
1.0E−02
Figure 14. Thermal Response
t
p
http://onsemi.com
MMSF7P03HD
Chip
Junction
t, TIME (s)
1.0E−01
7
t
rr
t
b
0.0253 F
0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W
0.1406 F
1.0E+00
0.5064 F
1.0E+01
2.9468 F
1.0E+02
177.14 F
Ambient
1.0E+03