NTD80N02 ON Semiconductor, NTD80N02 Datasheet - Page 3

• Manufacturer Part Number: NTD80N02
• Description: MOSFET N-CH 24V 80A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD80N02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2600pF @ 20V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Case: TO-252
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.0125
0.0075
0.0025
100
0.06
0.05
0.04
0.03
0.02
0.01
0.07
0.005
0.015
90
80
70
60
50
40
30
20
10
0.01
0
0
0
0
0
−50
9 V
8 V
0.5
Figure 1. On−Region Characteristics
−25
Figure 5. On−Resistance Variation with
V
V
DS
Figure 3. On−Resistance versus
GS
6.5 V
, DRAIN−TO−SOURCE VOLTAGE (V)
2
T
, GATE−TO−SOURCE VOLTAGE (V)
J
1
, JUNCTION TEMPERATURE (°C)
Gate−To−Source Voltage
0
4.6 V
5 V
4.8 V
5.2 V
6 V
1.5
4.4 V
25
Temperature
4
2
50
T
J
= 25°C
2.5
6
75
TYPICAL CHARACTERISTICS
V
3
GS
100
I
T
D
I
V
I
V
8
D
D
= 3.0 V
J
DS
DS
= 10 A
= 25°C
4.2 V
= 80 A
= 80 A
4 V
3.8 V
3.6 V
3.4 V
3.2 V
3.5
http://onsemi.com
= 4.5 V
= 10 V
125
10
4
150
3
0.015
0.005
1000
0.01
0.01
100
160
150
140
130
120
100
110
0.1
10
90
80
70
60
50
40
30
20
10
0
1
0
55
2
4
Figure 4. On−Resistance versus Drain Current
V
T
T
T
GS
J
J
J
V
= 25°C
= 25°C
= 125°C
DS
= 0 V
Figure 6. Drain−To−Source Leakage
V
V
Figure 2. Transfer Characteristics
DS
≥ 24 V
GS
60
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
3
8
Current versus Voltage
I
D
T
, DRAIN CURRENT (A)
and Gate Voltage
J
= −55°C
65
T
T
T
J
J
J
V
= 125°C
= 100°C
V
= 25°C
GS
GS
12
4
= 4.5 V
= 10 V
70
16
5
75
80
20
6