NTD80N02 ON Semiconductor, NTD80N02 Datasheet - Page 7

• Manufacturer Part Number: NTD80N02
• Description: MOSFET N-CH 24V 80A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD80N02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2600pF @ 20V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Case: TO-252
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

L3
L4
b2
e
1
b3
4
2
E
3
b
A
D
0.005 (0.13)
B
M
DETAIL A
C
c
L2
A
GAUGE
PLANE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
ROTATED 90 CW
c2
DETAIL A
H
C
L
http://onsemi.com
CASE 369C−01
L1
ISSUE D
5
7
A1
H
C
Z
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
Y14.5M, 1994.
MENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
STYLE 2:
DIM
A1
b2
b3
L1
L2
L3
L4
c2
PIN 1. GATE
A
b
D
E
H
L
Z
c
e
2. DRAIN
3. SOURCE
4. DRAIN
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
MIN
−−−
0.090 BSC
0.108 REF
0.020 BSC
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
MIN
−−−
2.29 BSC
2.74 REF
0.51 BSC
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−