NTJS3157NT4 ON Semiconductor, NTJS3157NT4 Datasheet

MOSFET N-CH 20V 3.2A SOT-363

NTJS3157NT4

Manufacturer Part Number
NTJS3157NT4
Description
MOSFET N-CH 20V 3.2A SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTJS3157NT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
400mV @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
500pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
NTJS3157N
Trench Power MOSFET
20 V, 4.0 A, Single N−Channel, SC−88
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
MAXIMUM RATINGS
Continuous Drain
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Junction−to−Ambient – Steady State
Junction−to−Ambient − t ≤ 5 s
Junction−to−Lead – Steady State
Utilization, Same as SC−70−6
Leading Trench Technology for Low R
Fast Switching for Increased Circuit Efficiency
SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
Pb−Free Packages are Available
DC−DC Conversion
Low Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
(Cu area = 1.127 in sq [1 oz] including traces).
Current (Note 1)
(Note 1)
(1/8” from case for 10 s)
Parameter
Parameter
(T
Steady
Steady
t ≤ 5 s
J
State
State
= 25°C unless otherwise stated)
T
T
T
T
t
A
A
A
A
p
= 10 ms
= 25 °C
= 85 °C
= 25 °C
= 25 °C
(Note 1)
DS(ON)
Symbol
Symbol
V
T
R
R
R
V
I
P
T
DSS
STG
T
DM
I
I
qJA
qJA
qJL
GS
D
S
J
D
L
Extending Battery Life
,
−55 to
Value
±8.0
Max
150
260
125
3.2
2.3
4.0
1.0
1.6
20
10
80
45
1
°C/W
Unit
Unit
°
°C
W
V
V
A
A
A
C
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
V
(BR)DSS
20 V
(Note: Microdot may be in either location)
G
D
D
CASE 419B
STYLE 28
SOT−363
ORDERING INFORMATION
T92
M
G
1
1
2
3
SC−88 (SOT−363)
http://onsemi.com
45 mW @ 4.5 V
55 mW @ 2.5 V
70 mW @ 1.8 V
R
DS(on)
Top View
= Device Code
= Date Code
= Pb−Free Package
MARKING DIAGRAM &
PIN ASSIGNMENT
Typ
Publication Order Number:
6
1
D
D
T92 M G
D
G
D
6
5
4
NTJS3157N/D
G
S
I
D
4.0 A
D
D
S
Max

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NTJS3157NT4 Summary of contents

Page 1

NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low R • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline ( mm) for Maximum Circuit Board Utilization, Same ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

TYPICAL PERFORMANCE CURVES 25° 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.25 0.2 ...

Page 4

TYPICAL PERFORMANCE CURVES 1400 1200 C iss 1000 800 600 C rss 400 200 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE ...

Page 5

... ORDERING INFORMATION Device NTJS3157NT1 NTJS3157NT1G NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package SC−88 SC−88 (Pb−Free) SC−88 SC−88 (Pb−Free) SC−88 SC−88 (Pb−Free) http://onsemi ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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