NTJS3157NT4 ON Semiconductor, NTJS3157NT4 Datasheet - Page 4

• Manufacturer Part Number: NTJS3157NT4
• Description: MOSFET N-CH 20V 3.2A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS3157NT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 400mV @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 500pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1400
1200
1000
100
800
600
400
200
10
1
0
8
1
Figure 9. Resistive Switching Time Variation
V
I
V
C
C
D
DS
GS
rss
iss
= 0.5 A
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
V
= 10 V
= 4.5 V
DS
4
= 0 V
Figure 7. Capacitance Variation
V
R
GS
G
, GATE RESISTANCE (OHMS)
vs. Gate Resistance
0
V
V
C
VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
DS
GS
rss
= 0 V
4
10
8
12
t
d(off)
T
J
16
= 25°C
http://onsemi.com
t
t
t
f
r
d(on)
C
C
oss
iss
100
20
4
5
4
3
2
1
0
0
6
5
4
3
2
1
0
(T
V
Q
0.2
Drain−to−Source Voltage vs. Total Charge
DS
GS
J
= 25°C unless otherwise noted)
Figure 10. Diode Forward Voltage vs. Current
V
T
1
GS
J
V
0.3
= 25°C
SD
Figure 8. Gate−to−Source and
= 0 V
Q
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
GD
2
g
, TOTAL GATE CHARGE (nC)
0.4
Q
3
G(TOT)
0.5
4
0.6
5
0.7
6
V
0.8
I
T
GS
D
J
= 3.2 A
= 25°C
7
0.9
8
10
8
6
4
2
0
1