NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet

NTMSD6N303R2SG

Manufacturer Part Number

NTMSD6N303R2SG

Description

MOSFET N-CH 30V 6A 8-SOIC

Manufacturer

ON Semiconductor

Series

FETKY™r

Datasheet

1.NTMSD6N303R2.pdf (11 pages)

Specifications of NTMSD6N303R2SG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

32 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

950pF @ 24V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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NTMSD6N303R2

Power MOSFET

6 Amps, 30 Volts

N−Channel SO−8 FETKYt

packaged with an industry leading, low forward drop, low leakage

Schottky Barrier rectifier to offer high efficiency components in a

space saving configuration. Independent pinouts for MOSFET and

Schottky die allow the flexibility to use a single component for

switching and rectification functions in a wide variety of applications.

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.

2. Mounted on 2″ square FR4 board

MOSFET MAXIMUM RATINGS

March, 2006 − Rev. 2

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage − Continuous

Drain Current − (Note 2)

Total Power Dissipation @ T

Single Pulse Drain−to−Source Avalanche

The FETKY product family incorporates low R

Pb−Free Packages are Available

Buck Converter

Buck−Boost

Synchronous Rectification

Low Voltage Motor Control

Battery Packs

Chargers

Cell Phones

(1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

= 25°C unless otherwise noted) (Note 1)

− Continuous @ T

− Single Pulse (tp ≤ 10 ms)

(Note 2)

Energy − Starting T

L = 10 mH, R

= 20 Vdc, I

= 30 Vdc, V

Rating

= 25 W)

= 9.0 Apk,

= 25°C

= 5.0 Vdc,

= 25°C

= 1.0 MW)

= 25°C

Symbol

DGR

DSS

DS(on)

Value

"20

325

6.0

2.0

MOSFETs

Watts

Unit

Vdc

Adc

Apk

NTMSD6N303R2

NTMSD6N303R2G

NTMSD6N303R2SG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 751

STYLE 18

SO−8

(Note: Microdot may be in either location)

Device

24 mW @ V

ORDERING INFORMATION

E6N3

420 mV @ I

SCHOTTKY DIODE

http://onsemi.com

6.0 AMPERES

30 VOLTS

= Device Code

= Blank or S

= Assembly Location

= Year

= Work Week

= Pb−Free Package

MOSFET

(TOP VIEW)

(Pb−Free)

MARKING DIAGRAM &

Package

SO−8

PIN ASSIGNMENT

Publication Order Number:

= 10 V (Typ)

= 3.0 A

NTMSD6N303R2/D

AYWW G

2500/Tape & Reel

E6N3x

Shipping

D D

S G

†

Related parts for NTMSD6N303R2SG

NTMSD6N303R2SG Summary of contents

Page 1

... Apk DM P 2.0 Watts D E 325 mJ AS NTMSD6N303R2 NTMSD6N303R2G NTMSD6N303R2SG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com MOSFET 6.0 AMPERES 30 VOLTS (Typ) GS SCHOTTKY DIODE 6 ...

Page 2

SCHOTTKY RECTIFIER MAXIMUM RATINGS Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (Note 3) (Rated 104° Peak Repetitive Forward Current (Note 3) (Rated V , Square Wave, 20 kHz ...

Page 3

MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mA Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc 25° ...

Page 4

TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 0.2 0.4 0.6 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...

Page 5

C iss 1400 1200 1000 C 800 rss 600 400 200 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance ...

Page 6

TYPICAL FET ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 I S Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 10 85°C −40 ° 125°C ...

Page 7

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 0 125°C J 0.01 85°C 0.001 0.0001 25°C 0.00001 0.000001 0 5 REVERSE VOLTAGE (VOLTS) R Figure 17. Typical Reverse Current 1000 100 ...

Page 8

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E−03 Figure 22. Schottky Thermal Response STEP DOWN SWITCHING REGULATORS + V in − − Synchronous Buck ...

Page 9

TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS − Boost Regulator + V in − Buck−Boost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger − ...

Page 10

TYPICAL APPLICATIONS Li−Ion BATTERY PACK APPLICATIONS Battery Pack Li−Ion SMART IC BATTERY CELLS DISCHARGE Q1 SCHOTTKY • Applicable in battery packs which require a high current level. • During charge cycle and Q1 is off. Schottky can ...

Page 11

... SCALE 6:1 details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81− ...

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