NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet - Page 11

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NTMSD6N303R2SG

Manufacturer Part Number
NTMSD6N303R2SG
Description
MOSFET N-CH 30V 6A 8-SOIC
Manufacturer
ON Semiconductor
Series
FETKY™r
Datasheet

Specifications of NTMSD6N303R2SG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
32 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 24V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PUBLICATION ORDERING INFORMATION
FETKY is a trademark of International Rectifier Corporation.
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor and
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
−Z−
−Y−
B
H
−X−
8
1
0.25 (0.010)
G
A
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
D
5
4
M
Z
S
Y
*For additional information on our Pb−Free strategy and soldering
S
C
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.25 (0.010)
X
SEATING
PLANE
S
0.10 (0.004)
0.024
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
0.6
PACKAGE DIMENSIONS
M
0.275
7.0
SOLDERING FOOTPRINT*
http://onsemi.com
Y
CASE 751−07
M
N
SOIC−8 NB
ISSUE AG
X 45
_
M
11
K
SCALE 6:1
0.060
0.155
1.52
4.0
J
1.270
0.050
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
5. DIMENSION D DOES NOT INCLUDE DAMBAR
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
STYLE 18:
ANSI Y14.5M, 1982.
MOLD PROTRUSION.
PER SIDE.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
STANDARD IS 751−07.
DIM
PIN 1. ANODE
A
B
C
D
G
H
K
M
N
J
S
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
MILLIMETERS
MIN
4.80
3.80
1.35
0.33
0.10
0.19
0.40
0.25
5.80
0
1.27 BSC
_
MAX
5.00
4.00
1.75
0.51
0.25
0.25
1.27
0.50
6.20
NTMSD6N303R2/D
8
_
0.189
0.150
0.053
0.013
0.004
0.007
0.016
0.010
0.228
MIN
0.050 BSC
0
INCHES
_
0.197
0.157
0.069
0.020
0.010
0.010
0.050
0.020
0.244
MAX
8
_

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