NTP2955 ON Semiconductor, NTP2955 Datasheet - Page 2

• Manufacturer Part Number: NTP2955
• Description: MOSFET P-CH 60V 2.4A TO220AB
• Manufacturer: ON Semiconductor

Specifications of NTP2955

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 196 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.156 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
V
(T
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
J
Q
(BR)DSS
=25°C unless otherwise stated)
C
C
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
Q
DS(on)
V
g
d(on)
d(off)
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
t
FS
ISS
t
t
GS
GD
SD
RR
a
b
r
f
/T
/T
J
J
V
http://onsemi.com
V
V
V
GS
V
V
V
I
V
DS
V
V
GS
GS
V
V
S
I
GS
GS
GS
D
GS
GS
GS
DS
DS
= 0 V, dI
= −12 A
= −48 V
= −10 V, V
= −10 V, V
= −12 A, R
= 0 V,
= 0 V,
Test Condition
= V
= 0 V, I
= −10 V, I
= −60 V, I
= 0 V, f = 1.0 MHz,
= 0 V, V
V
I
I
DS
D
S
DS
2
= −12 A
= −12 A
, I
S
= −25 V
/dt = 100 A/ms,
D
D
GS
DD
= −250 mA
DS
G
= −250 mA
D
D
= 9.1 W
= ±20 V
T
= −12 A
= −12 A
T
= −48 V,
= −30 V,
T
T
J
J
J
J
= 125°C
= 125°C
= 25°C
= 25°C
−2.0
Min
−60
−1.36
−1.6
Typ
156
507
150
126
6.0
1.6
3.4
6.2
67
56
48
14
10
41
27
45
53
42
12
±100
Max
−1.0
−4.0
−2.0
−10
196
700
250
2.5
98
20
80
47
85
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
V
V
S
V