NTD6600N-1G ON Semiconductor, NTD6600N-1G Datasheet - Page 2

• Manufacturer Part Number: NTD6600N-1G
• Description: MOSFET N-CH 100V 12A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD6600N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 146 mOhm @ 6A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 1.28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Product Discontinuance #16155
PLEASE NOTE: ON Semiconductor may implement minimum order quantities or dollar
amounts based on inventories available. Also, Devices on this Product Discontinuance
become NCNR (Non-Cancelable, Non-Returnable).
For questions or concerns regarding this notification, please contact your local sales office or
customer service representative.
Additional contacts are:
Americas & Europe
Herve Marchionini (email is [e-mail])
1.602.405.8436
USA
Japan & Asia Pacific:
Nobuyuki Otake (email is [e-mail])
81-241-27-5443
Japan
NOTE: SUBSEQUENT TO PUBLISHING A DISCONTINUANCE NOTICE,
NOTE: TO ALLOW AN ORDERLY EXIT FROM THE MARKET, PRODUCT SHALL NOT BE
Issue Date: 01-Oct-2008
ON
ANNOUNCEMENT DATE TO PLACE FINAL LIFETIME PURCHASE ORDERS.
DELIVERED AFTER TWELVE (12) MONTHS BEYOND THE ANNOUNCEMENT
DATE.
End of life buy orders must be placed before 31-Mar-2009
and End of life buy orders must be shipped before 30-Sep-2009
SEMICONDUCTOR
WILL
Rev.08-24-05
ALLOW
SIX
(6)
MONTHS
FROM
THE
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