NTD6600N-1G ON Semiconductor, NTD6600N-1G Datasheet - Page 5

• Manufacturer Part Number: NTD6600N-1G
• Description: MOSFET N-CH 100V 12A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD6600N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 146 mOhm @ 6A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 1.28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Issue Date: 01-Oct-2008
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Rev.08-24-05
Replacement Device Supplier
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