NTB45N06LT4G ON Semiconductor, NTB45N06LT4G Datasheet - Page 2

• Manufacturer Part Number: NTB45N06LT4G
• Description: MOSFET N-CH 60V 45A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB45N06LT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 22.8 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 45 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.028Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB45N06LT4GOS; NTB45N06LT4GOS; NTB45N06LT4GOSTR

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTP45N06L
NTP45N06LG
NTB45N06L
NTB45N06LG
NTB45N06LT4
NTB45N06LT4G
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds
Derate above 25°C
(V
I
L(pk)
DD
= 50 Vdc, V
= 40 A, V
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
DS
GS
Device
= 60 Vdc, R
(T
= 5.0 Vdc, L = 0.3 mH
J
GS
= 25°C unless otherwise noted)
A
A
A
= 10 MW)
= 25°C
= 25°C (Note 1)
= 25°C (Note 2)
p
G
v10 ms)
A
A
= 25 W)
p
= 25°C
= 100°C
v10 ms)
Rating
NTP45N06L, NTB45N06L
http://onsemi.com
J
= 25°C
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−220
TO−220
D
D
D
D
2
2
2
2
2
PAK
PAK
PAK
PAK
2
).
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
, T
DSS
DGR
T
I
I
DM
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
stg
2
800 Tape & Reel
800 Tape & Reel
).
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
−55 to +175
Shipping
Value
"15
"20
0.83
46.8
63.2
150
125
240
260
3.2
2.4
1.2
60
60
45
30
†
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
W