NTB45N06LT4G ON Semiconductor, NTB45N06LT4G Datasheet - Page 4

• Manufacturer Part Number: NTB45N06LT4G
• Description: MOSFET N-CH 60V 45A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB45N06LT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 22.8 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 45 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.028Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB45N06LT4GOS; NTB45N06LT4GOS; NTB45N06LT4GOSTR

0.046
0.042
0.038
0.034
0.026
0.022
0.018
0.014
0.03
80
70
60
50
40
30
20
10
1.8
1.6
1.4
1.2
0.8
0.6
0
2
1
−50
0
0
Figure 3. On−Resistance vs. Gate−to−Source
V
V
GS
−25
I
V
DS
D
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
10
GS
V
= 5 V
= 22.5 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= 5 V
T
= 10 V
J
0
, JUNCTION TEMPERATURE (°C)
1
20
I
D
, DRAIN CURRENT (AMPS)
25
30
Temperature
V
T
T
GS
T
50
J
Voltage
J
J
= 100°C
= −55°C
V
= 25°C
= 9 V
2
40
GS
V
GS
75
= 8 V
V
= 7 V
GS
50
100
= 6 V
V
NTP45N06L, NTB45N06L
GS
3
60
V
V
125
GS
GS
V
= 5.5 V
V
GS
GS
= 3.5 V
= 4.5 V
http://onsemi.com
= 4 V
= 5 V
70
150
175
4
80
4
10000
0.046
0.042
0.038
0.034
0.026
0.022
0.018
1000
0.03
100
70
60
50
40
30
20
10
10
80
0
1.8
0
0
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
T
V
T
V
J
DS
J
V
V
GS
10
= 100°C
= 25°C
DS
GS
> = 10 V
10
Figure 2. Transfer Characteristics
= 0 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.6
20
I
D
, DRAIN CURRENT (AMPS)
20
30
Gate Voltage
T
3.4
vs. Voltage
J
T
T
T
V
J
J
J
= −55°C
V
GS
= 150°C
= 125°C
= 100°C
GS
40
30
= 10 V
= 5 V
4.2
50
40
60
5
50
70
5.8
80
60