IPB08CN10N G Infineon Technologies, IPB08CN10N G Datasheet - Page 6

• Manufacturer Part Number: IPB08CN10N G
• Description: MOSFET N-CH 100V 95A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB08CN10N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 95A
• Vgs(th) (max) @ Id: 4V @ 130µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6660pF @ 50V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 6.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096448

Rev. 1.08
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
20
15
10
DS
=f(T
5
0
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=95 A; V
20
20
Crss
Coss
Ciss
GS
98 %
V
=10 V
T
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
IPI08CN10N G
=V
0.5
DS
20
175 °C
130 µA
V
T
SD
j
60
[°C]
1
25 °C, 98%
[V]
25 °C
1300 µA
100
IPB08CN10N G
IPP08CN10N G
1.5
175 °C, 98%
140
2010-04-26
180
2