NTF6P02T3G ON Semiconductor, NTF6P02T3G Datasheet - Page 5

• Manufacturer Part Number: NTF6P02T3G
• Description: MOSFET P-CH 20V 10A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF6P02T3G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1200pF @ 16V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.044 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF6P02T3GOS; NTF6P02T3GOS; NTF6P02T3GOSTR

0.01
0.1
1.0E-03
1
SINGLE PULSE
D = 0.5
0.1
0.05
0.02
0.2
0.01
1.0E-02
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E-01
Figure 11. FET Thermal Response
http://onsemi.com
CHIP
JUNCTION
t, TIME (s)
5
1.0E+00
NORMALIZED TO R
0.0154 F
0.0175 W
0.0854 F
0.0710 W
1.0E+01
qJA
0.3074 F
0.2706 W
AT STEADY STATE (1″ PAD)
0.5779 W
1.7891 F
1.0E+02
0.7086 W
107.55 F
AMBIENT
1.0E+03