NTF6P02T3G ON Semiconductor, NTF6P02T3G Datasheet - Page 4
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NTF6P02T3G
Manufacturer Part Number
NTF6P02T3G
Description
MOSFET P-CH 20V 10A SOT223
Manufacturer
ON Semiconductor
Datasheet
1.NTF6P02T3G.pdf
(6 pages)
Specifications of NTF6P02T3G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1200pF @ 16V
Power - Max
8.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.044 Ohms
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 10 A
Power Dissipation
8.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTF6P02T3GOS
NTF6P02T3GOS
NTF6P02T3GOSTR
NTF6P02T3GOS
NTF6P02T3GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTF6P02T3G
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Company:
Part Number:
NTF6P02T3G
Manufacturer:
ONSEMI
Quantity:
37 555
Final Product/Process Change Notification #16003
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Issue Date: 02-Apr-2007
Rev.07-02-06
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