BAP55L,315 NXP Semiconductors, BAP55L,315 Datasheet - Page 3

• Manufacturer Part Number: BAP55L,315
• Description: DIODE PIN 50V 100MA SOD-882
• Manufacturer: NXP Semiconductors

Specifications of BAP55L,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
• Resistance @ If, F: 700 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 0.28 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.28 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.7 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 4.5 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1925-2; 934058521315; BAP55L T/R

Philips Semiconductors
9397 750 14811
Preliminary data sheet
Table 6:
T
Symbol Parameter
L
s
s
j
L
S
12
21
= 25 C unless otherwise specified.
2
2
isolation
insertion loss
charge carrier life
time
series inductance
Characteristics
Rev. 01 — 5 April 2005
…continued
Conditions
V
I
I
I
I
when switched from
I
R
I
F
F
F
F
F
R
R
L
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 0.5 mA;
= 1 mA;
= 10 mA;
= 100 mA;
= 10 mA to I
= 3 mA
= 100 ; measured at
= 0 V;
Figure 4
Figure 3
Figure 3
Figure 3
Figure 3
R
= 6 mA;
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
17.6
13
11.1
0.25
0.27
0.29
0.17
0.19
0.21
0.07
0.09
0.12
0.05
0.07
0.09
0.28
0.6
Silicon PIN diode
BAP55L
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
s
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