BAP65-02,115 NXP Semiconductors, BAP65-02,115 Datasheet - Page 2

• Manufacturer Part Number: BAP65-02,115
• Description: DIODE PIN 30V 100MA SOD-523
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Termination Style: Solder Tails
• Carrier Life: 0.17 us
• Forward Voltage Drop: 0.9 V
• Maximum Diode Capacitance: 0.9 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: I-IGIA
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1937-2; 934056546115; BAP65-02 T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
T
BAP65-02
Product data sheet
Symbol
V
I
C
r
s
s
s
R
D
j
F
21
21
21
d
= 25



2
2
2

C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Symbol
V
Symbol
R
I
P
T
T
T
F
stg
j
amb
R
tot
th j-s
Limiting values
Thermal characteristics
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from junction
to soldering point
All information provided in this document is subject to legal disclaimers.
I
V
V
V
V
V
I
V
Conditions
I
I
I
V
V
I
I
I
I
I
I
Rev. 5 — 28 September 2010
F
F
F
F
F
F
F
F
F
F
F
R
R
R
R
R
R
R
R
= 50 mA
= 1 mA; f = 100 MHz
= 5 mA; f = 100 MHz
= 10 mA; f = 100 MHz
= 100 mA; f = 100 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 5 mA; f = 900 MHz
= 5 mA; f = 1800 MHz
= 5 mA; f = 2450 MHz
= 20 V
= 0 V; f = 1 MHz
= 1 V; f = 1 MHz
= 3 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
Conditions
T
s
 90 C
Conditions
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
0.55
0.35
0.13
0.16
0.11
0.13
Min
-
65
65
40
Typ
-
0.65
0.5
0.375
1
0.65
0.56
10
5.8
4.4
0.11
0.08
BAP65-02
Typ
85
© NXP B.V. 2010. All rights reserved.
Silicon PIN diode
Max
30
100
715
+150
+150
+85
Max
1.1
20
-
0.9
0.8
-
-
0.95
0.9
-
-
-
-
-
-
-
-
-
-
V
mA
V
pF
pF
dB
dB
dB
dB
Unit
mW
C
C
C
Unit
K/W
Unit
nA
pF
pF




dB
dB
dB
dB
dB
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