DAN235ETL Rohm Semiconductor, DAN235ETL Datasheet

DIODE SWITCH BAND 35V SOT-416 TR

DAN235ETL

Manufacturer Part Number
DAN235ETL
Description
DIODE SWITCH BAND 35V SOT-416 TR
Manufacturer
Rohm Semiconductor
Datasheet
1.DAN235ETL.pdf (4 pages)

Specifications of DAN235ETL

Diode Type
Standard - 1 Pair Common Cathode
Voltage - Peak Reverse (max)
35V
Capacitance @ Vr, F
1.2pF @ 6V, 1MHz
Resistance @ If, F
900 mOhm @ 2mA, 100MHz
Power Dissipation (max)
150mW
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Dual Common Cathode
Reverse Voltage
35 V
Forward Voltage Drop
1 V
Maximum Diode Capacitance
1.2 pF
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
0.9 Ohms
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Lead Free Status / Rohs Status
 Details
High frequency switching
1)Ultra small mold type.（EMD3）
2)High reliability
Silicon epitaxial
Power dissipation
Reverse voltage (DC)
Junction temperature
Storage temperature
Forward voltage
Reverse current
Capacitance between terminals
Forward resistance
DAN235E
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Band Switching Diode
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
Pd
V
V
Ct
Tj
I
rf
R
R
F
1.8±0.1
4.0±0.1
0.2±0.1
　　-0.05
Dimensions (Unit : mm)
JEITA : SC-75A
JEDEC : SOT-416
ROHM : EMD3
Min.
-
-
-
-
dot (year week factory)
2.0±0.05
55 to 125
(2)
0.5
1.6±0.2
1.0±0.1
Limits
150
125
Typ.
35
-
-
-
-
0.5
　　　 0.05
0.3±0.1
(3)
1/3
(1)
Max.
1.0
1.2
0.9
10
φ1.55±0.1
　　　　　 0
φ1.5 0.1
0
0.15±0.05
0.7±0.1
0.55±0.1
mW
Unit
Unit
nA
pF
°C
°C
V
V
Ω
φ0.5±0.1
0～0.1
I
V
V
I
F
F
=10mA
R
R
=2mA , f=100MHz
=25V
=6V , f=1MHz
Structure
Land size figure (Unit : mm)
EMD3
Conditions
Data Sheet
0.6
0.5
0.7
1.0
2011.04 - Rev.C
0.5
0.3±0.1
0.9±0.2
0.6

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DAN235ETL Summary of contents

Page 1

Band Switching Diode DAN235E Applications High frequency switching Features 1)Ultra small mold type.（EMD3） 2)High reliability Construction Silicon epitaxial Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Power dissipation Reverse voltage (DC) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) ...

Page 2

DAN235E 100 Ta=75℃ 10 Ta=125℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 860 Ta=25℃ IF=10mA 850 n=30pcs 840 830 AVE:834.0mV 820 810 VF DISPERSION MAP 20 1cyc ...

Page 3

DAN235E 10 9 AVE:7.02kV AVE:1.06kV 2 1 C=200pF C=100pF 0 R=0Ω R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 Data Sheet 2011.04 - Rev.C ...

Page 4

ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...

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