PMBD354,215 NXP Semiconductors, PMBD354,215 Datasheet

DIODE SCHOTTKY 4V 30MA SOT23

PMBD354,215

Manufacturer Part Number
PMBD354,215
Description
DIODE SCHOTTKY 4V 30MA SOT23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PMBD354,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (max)
4V
Current - Max
30mA
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Product
Schottky Diodes
Peak Reverse Voltage
4 V
Forward Continuous Current
0.03 A
Configuration
Dual Series
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA
Operating Temperature Range
+ 100 C
Mounting Style
SMD/SMT
Resistance @ If, F
-
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057257215
PMBD354 T/R
PMBD354 T/R
Product data sheet
Supersedes data of 2002 Aug 06
DATA SHEET
PMBD354
Schottky barrier double diode
book, halfpage
DISCRETE SEMICONDUCTORS
M3D088
2003 Mar 25

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PMBD354,215 Summary of contents

Page 1

DATA SHEET book, halfpage PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 DISCRETE SEMICONDUCTORS M3D088 2003 Mar 25 ...

Page 2

... NXP Semiconductors Schottky barrier double diode FEATURES • Low forward voltage • Small SMD package • Low capacitance • Matched capacitance. APPLICATIONS • UHF mixer • Sampling circuits • Modulators • Phase detection. DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package ...

Page 3

... NXP Semiconductors Schottky barrier double diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per diode V forward voltage F I reverse current R C diode capacitance d ΔC capacitance matching d Note = 300 μs; δ = 0.02. 1. Pulse test THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient ...

Page 4

... NXP Semiconductors Schottky barrier double diode GRAPHICAL DATA 2 10 handbook, halfpage I F (mA −1 10 − 200 400 = 100 °C. (1) T amb = 60 °C. (2) T amb = 25 °C. (3) T amb = −40 °C. (4) T amb Fig.2 Forward current as a function of forward voltage; typical values. 0.8 handbook, halfpage ...

Page 5

... NXP Semiconductors Schottky barrier double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Mar scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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