1PS66SB17,115 NXP Semiconductors, 1PS66SB17,115 Datasheet - Page 8

• Manufacturer Part Number: 1PS66SB17,115
• Description: DIODE SCHOTTKY 4V 30MA SS-MINI
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of 1PS66SB17,115

• Package / Case: SS Mini-6 (SOT-666)
• Diode Type: Schottky - 3 Independent
• Voltage - Peak Reverse (max): 4V
• Current - Max: 30mA
• Capacitance @ Vr, F: 0.65pF @ 0.5V, 1MHz
• Product: Schottky Diodes
• Peak Reverse Voltage: 4 V
• Forward Continuous Current: 0.03 A
• Configuration: Triple Parallel
• Forward Voltage Drop: 0.6 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.25 uA @ 3 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Resistance @ If, F: -
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1PS66SB17 T/R; 1PS66SB17 T/R; 934058743115

Philips Semiconductors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Packing information. . . . . . . . . . . . . . . . . . . . . . 5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Contact information . . . . . . . . . . . . . . . . . . . . . 7
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
4 V, 30 mA low C
d
Schottky barrier diode
Document number: 9397 750 14587
1PSxSB17
Date of release: 4 April 2005