SI3210-E-FM Silicon Laboratories Inc, SI3210-E-FM Datasheet - Page 12

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SI3210-E-FM

Manufacturer Part Number
SI3210-E-FM
Description
SLIC 1-CH 60dB 41mA 3.3V/5V 38-Pin QFN EP
Manufacturer
Silicon Laboratories Inc
Series
ProSLIC®r
Datasheets

Specifications of SI3210-E-FM

Package
38QFN EP
Number Of Channels Per Chip
1
Longitudinal Balanced
60 dB
Loop Current
41 mA
Minimum Operating Supply Voltage
3.13 V
Typical Operating Supply Voltage
3.3|5 V
Typical Supply Current
88 mA
Function
Subscriber Line Interface Concept (SLIC), CODEC
Interface
PCM, SPI
Number Of Circuits
1
Voltage - Supply
3.3V, 5V
Current - Supply
88mA
Power (watts)
700mW
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
*
Includes
BORSCHT Functions, DTMF Generation and Decoding, FSK Generation, Pulse Metering Generation, Voice Loopback Test Modes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3210-E-FMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Si3210/Si3211
Table 5. Monitor ADC Characteristics
(V
12
Table 6. Si321x DC Characteristics, V
(V
Table 7. Si321x DC Characteristics, V
(V
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (Voltage)
Gain Error (Current)
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
DDA
DDA
DDA
, V
,V
,V
DDD
DDD
DDD
Parameter
Parameter
Parameter
= 4.75 to 5.25 V, T
= 3.13 to 3.47 V, T
= 3.13 to 5.25 V, T
A
A
A
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Symbol
DNLE
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
INLE
V
V
V
V
V
V
V
V
I
I
OH
OL
OH
OL
IH
L
IL
IH
L
IL
DIO1,DIO2,SDITHRU: I
DIO1,DIO2,DOUT,SDITHRU:
DIO1,DIO2,DOUT,SDITHRU:
SDO,INT,DTX:I
DDA
DIO1,DIO2,SDITHRU:
DDA
SDO,INT,DTX:I
DOUT: I
SDO, DTX:I
Test Condition
Test Condition
I
DTX:I
O
DOUT: I
Test Condition
= –4 mA SDO,
= V
= V
I
O
I
O
= 4 mA
O
O
DDD
Rev. 1.45
DDD
= –8 mA
= 2 mA
= –40 mA
O
= –40 mA
O
O
= 5.0 V
= 3.3 V
= –4 mA
= 8 mA
O
= 4 mA
O
=–2 mA
0.7 x V
V
V
DDD
DDD
0.7 x V
V
V
–1/2
Min
Min
–10
–1
DDD
DDD
– 0.6
– 0.8
Min
–10
DDD
– 0.6
– 0.8
DDD
Typ
Typ
Typ
0.3 x V
0.3 x V
Max
Max
Max
1/2
10
20
0.4
0.4
10
10
1
DDD
DDD
Unit
LSB
LSB
Unit
Unit
%
%
µA
µA
V
V
V
V
V
V
V
V
V
V

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