PUMH11T/R NXP Semiconductors, PUMH11T/R Datasheet - Page 6

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PUMH11T/R

Manufacturer Part Number
PUMH11T/R
Description
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of PUMH11T/R

Package
6SOT-363
Configuration
Dual
Minimum Dc Current Gain
30@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.15@0.5mA@10mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
NXP Semiconductors
2003 Oct 20
Plastic surface mounted package; 6 leads
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
1
6
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
scale
EIAJ
6
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
PEMH11; PUMH11
L p
Q
0.1
A
y
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
A
SOT363

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