PUMH9T/R NXP Semiconductors, PUMH9T/R Datasheet - Page 5

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PUMH9T/R

Manufacturer Part Number
PUMH9T/R
Description
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of PUMH9T/R

Package
6SOT-363
Configuration
Dual
Minimum Dc Current Gain
100@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.1@0.25mA@5mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
NXP Semiconductors
PACKAGE OUTLINES
2004 Apr 14
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
JEITA
scale
1
5
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
PIMH9; PUMH9; PEMH9
H E
E
detail X
PROJECTION
EUROPEAN
L p
c
X
Product data sheet
ISSUE DATE
04-11-08
06-03-16
SOT666

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