BC850CT/R NXP Semiconductors, BC850CT/R Datasheet - Page 5

• Manufacturer Part Number: BC850CT/R
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BC850CT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 420@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.5mA@10mA|0.6@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
2004 Jan 16
handbook, full pagewidth
handbook, full pagewidth
NPN general purpose transistors
BC849B; BC850B.
BC849C; BC850C.
h FE
h FE
300
200
100
600
400
200
0
0
10
10
−2
−2
10
10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
1
1
5
10
10
V CE = 5 V
V CE = 5 V
10
10
2
2
BC849; BC850
I C (mA)
I C (mA)
Product data sheet
MBH724
MBH725
10
10
3
3