BC860CT/R NXP Semiconductors, BC860CT/R Datasheet - Page 3

• Manufacturer Part Number: BC860CT/R
• Description: Trans GP BJT PNP 45V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BC860CT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 420@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA|0.65@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BC859
BC860
BC859
BC860
PARAMETER
PARAMETER
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
3
CONDITIONS
note 1
CONDITIONS
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
BC859; BC860
500
−30
−50
−30
−45
−5
−100
−200
−200
250
+150
150
+150
MAX.
Product data sheet
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
K/W
UNIT