BCX70KT/R NXP Semiconductors, BCX70KT/R Datasheet - Page 3

• Manufacturer Part Number: BCX70KT/R
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCX70KT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 100@10uA@5V|380@2mA@5V|100@50mA@1V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.85@0.25mA@10mA|1.05@1.25mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.35@0.25mA@10mA|0.55@1.25mA@50mA V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
PARAMETER
PARAMETER
3
open emitter
open base
open collector
T
note 1
amb
CONDITIONS
CONDITIONS
≤ 25 °C
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
BCX70 series
45
45
5
100
200
200
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT