BDP947E6327XT Infineon Technologies, BDP947E6327XT Datasheet - Page 3

• Manufacturer Part Number: BDP947E6327XT
• Description: Trans GP BJT NPN 45V 3A 4-Pin (3+Tab) SOT-223 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BDP947E6327XT

• Package: 4SOT-223
• Supplier Package: SOT-223
• Pin Count: 4
• Minimum Dc Current Gain: 25@10mA@5V|85@500mA@1V|50@2A@2V
• Maximum Operating Frequency: 100(Typ) MHz
• Maximum Dc Collector Current: 3 A
• Maximum Base Emitter Saturation Voltage: 1.3@0.2A@2A V
• Maximum Collector Emitter Saturation Voltage: 0.5@0.2A@2A V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
2
C
C
C
C
C
C
E
C
C
C
C
C
C
C
For calculation of R thJA please refer to Application Note Thermal Resistance
Pulse test: t < 300µs; D < 2%
CB
CB
EB
CB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 0 , I
= 10 mA, V
= 500 mA, V
= 2 A, V
= 2 A, V
= 2 A, I
= 2 A, I
= 50 mA, V
= 4 V, I
= 45 V, I
= 45 V, I
= 10 V, f = 1 MHz
E
B
B
= 100 µA, BDP953
CE
CE
= 0.2 A
= 0.2 A
C
C
B
B
B
E
E
E
E
= 0
CE
CE
= 2 V, BDP947, BDP949
= 2 V, BDP953
= 0
= 0 , BDP947
= 0 , BDP949
= 0 , BDP953
= 0
= 0 , T
CE
= 0 , BDP947
= 0 , BDP949
2)
= 5 V
= 10 V, f = 100 MHz
= 1 V
A
= 150 °C
2)
A
= 25°C, unless otherwise specified
2)
3
f
C
Symbol
V
V
V
I
I
h
V
V
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
cb
BDP947, BDP949, BDP953
min.
100
120
100
45
60
45
60
25
50
15
5
-
-
-
-
-
-
-
Values
typ.
100
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
475
100
0.1
0.5
1.3
20
2009-05-28
-
-
-
-
-
-
-
-
-
-
-
-
MHz
pF
Unit
V
µA
nA
-
V