BFR520T/R NXP Semiconductors, BFR520T/R Datasheet - Page 2

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BFR520T/R

Manufacturer Part Number
BFR520T/R
Description
Trans GP BJT NPN 15V 0.07A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of BFR520T/R

Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
60@20mA@6V
Maximum Operating Frequency
9000(Typ) MHz
Maximum Dc Collector Current
0.07 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
2.5 V
Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 13397
Product data sheet
Table 1:
[1]
Table 2:
Table 3:
Table 4:
[1]
Symbol Parameter
NF
Pin
1
2
3
Type number
BFR520
Type number
BFR520
s
21
T
* = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
2
sp
is the temperature at the soldering point of the collector tab.
insertion power gain
noise figure
Quick reference data
Pinning
Ordering information
Marking
Description
base
emitter
collector
Package
Name
-
Rev. 03 — 1 September 2004
Description
plastic surface mounted package; 3 leads
…continued
Conditions
I
T
f = 900 MHz
C
amb
s
I
f = 900 MHz
I
f = 900 MHz
I
f = 2 GHz
= 20 mA; V
=
C
C
C
= 5 mA; V
= 20 mA; V
= 5 mA; V
= 25 C;
opt
; T
amb
CE
Marking code
32*
CE
CE
= 25 C
CE
= 6 V;
= 6 V;
= 8 V;
= 6 V;
Simplified outline
1
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
13
-
-
-
3
SOT23
2
Typ
14
1.1
1.6
1.9
Symbol
BFR520
1
Max
-
1.6
2.1
-
sym021
Version
SOT23
3
2
2 of 13
Unit
dB
dB
dB
dB

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