BA 892 H6433 Infineon Technologies, BA 892 H6433 Datasheet - Page 3

• Manufacturer Part Number: BA 892 H6433
• Description: DIODE RF SW 35V 100MA SCD80
• Manufacturer: Infineon Technologies

Specifications of BA 892 H6433

• Diode Type: Standard - Single
• Voltage - Peak Reverse (max): 35V
• Current - Max: 100mA
• Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
• Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
• Package / Case: SCD 80
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BA892H6433XT

1
Electrical Characteristics at T
Parameter
Insertion loss
I
I
I
Isolation
V
V
V
AC Characteristics
Diode capacitance
V
V
V
Reverse parallel resistance
V
Forward resistance
I
I
Charge carrier life time
I
R
I-region width
BA892-02L in series configuration, Z = 50
F
F
F
F
F
F
R
R
R
R
R
R
R
L
= 0.1 mA, f = 1.8 GHz
= 3 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 3 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 0 V, f = 100 MHz
= 0 V, f = 470 MHz
= 0 V, f = 1 GHz
= 100
= 1 V, f = 1 MHz
= 3 V, f = 1 MHz
= 0 V, f = 100 MHz
= 0 V, f = 100 MHz
1)
R
1)
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3mA,
3
Symbol
I
I
C
R
r
W
L
SO
f
T
P
rr
I
min.
0.65
0.6
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.92
0.85
0.45
0.36
23.5
10.5
100
typ.
120
0.1
0.5
0.4
5.5
BA592/BA892...
3
1
max.
2007-04-19
1.4
1.1
0.7
0.5
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
dB
k
µm