BAR 65-03W E6327 Infineon Technologies, BAR 65-03W E6327 Datasheet - Page 4

• Manufacturer Part Number: BAR 65-03W E6327
• Description: DIODE RF SGL 30V 100MA SOD-323
• Manufacturer: Infineon Technologies

Specifications of BAR 65-03W E6327

• Package / Case: SOD-323
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
• Resistance @ If, F: 900 mOhm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Frequency Range: VHF
• Carrier Life: 0.08 us
• Forward Voltage Drop: 1 V
• Maximum Diode Capacitance: 0.8 pF at 3 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR6503WE6327XT; SP000010186

Diode capacitance C
f = Parameter
Forward resistance r
f = 100MHz
Ohm
0.35
0.25
0.15
10
0.5
0.4
0.3
0.2
0.1
10
10
F
-1
0
1
0
10
-2
2
4
10
6
-1
1 MHz ... 1.8 GHz
8
T
f
10
= (I
= (V
10
0
12
F
R
)
14
)
10
16
1
V
V
I
F
R
mA
20
10
2
4
Reverse parallel resistance R
f = Parameter
Forward current I
T
KOhm
A
= Parameter
10
10
10
10
10
10
10
10
10
10
10
10
10
A
-1
-1
-2
-3
-4
-5
-6
4
3
2
1
0
0
0
0
2
0.2
4
6
100 MHz
0.4
F
1.8 GHz
=
8
1 GHz
0.6
10
(V
F
12
)
0.8
14
P
2007-04-19
BAR65...
= (V
16
-40 °C
25 °C
85 °C
125 °C
V
V
V
V
R
F
R
)
1.2
20