BAR 90-098LRH E6327 Infineon Technologies, BAR 90-098LRH E6327 Datasheet - Page 3
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BAR 90-098LRH E6327
Manufacturer Part Number
BAR 90-098LRH E6327
Description
DIODE PIN ANTI 80V 100MA TSLP4-7
Manufacturer
Infineon Technologies
Datasheet
1.BAR_90-02LRH_E6327.pdf
(10 pages)
Specifications of BAR 90-098LRH E6327
Package / Case
TSLP-4-7
Diode Type
PIN - 2 Independant
Voltage - Peak Reverse (max)
80V
Current - Max
100mA
Capacitance @ Vr, F
0.35pF @ 1V, 1MHz
Resistance @ If, F
800 mOhm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Dual Anti-Parallel
Reverse Voltage
80 V
Forward Continuous Current
100 mA
Frequency Range
UHF
Carrier Life
0.75 us
Forward Voltage Drop
1 V
Maximum Diode Capacitance
0.35 pF at 1 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
2.3 Ohms at 3 mA
Maximum Series Resistance @ Minimum If
2 Ohms at 1 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR90098LRHE6327XT
SP000053484
SP000053484
1
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
V
V
V
Reverse parallel resistance
V
V
V
Forward resistance
I
I
I
Charge carrier life time
I
R
I-region width
Insertion loss
I
I
I
Isolation
V
V
V
BAR90-02LRH in series configuration, Z = 50 Ω
F
F
F
F
F
F
F
R
R
R
R
R
R
R
R
R
R
L
= 1 mA, f = 100 MHz
= 3 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 1 mA, f = 1.8 GHz
= 3 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 100 Ω
= 1 V, f = 1 MHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 0.9 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 2.45 GHz
1)
R
1)
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3 mA,
3
Symbol
C
R
r
τ
W
I
I
L
SO
f
T
P
rr
I
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.25
0.19
0.18
0.16
0.11
0.08
18.5
13.5
11.5
typ.
750
1.3
0.8
0.3
35
20
2
5
4
max.
0.35
2010-03-05
2.3
BAR90...
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
k Ω
Ω
ns
µm
dB