BF908WR,115 NXP Semiconductors, BF908WR,115 Datasheet - Page 6

• Manufacturer Part Number: BF908WR,115
• Description: MOSFET NCH DUAL GATE 12V CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF908WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 40mA
• Noise Figure: 0.6dB
• Current - Test: 15mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 12V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.1@8V@Gate 1/1.8@8V@Gate 2pF
• Output Capacitance (typ)@vds: 1.7@8VpF
• Reverse Capacitance (typ): 0.03@8VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 300mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1969-2; 934031470115; BF908WR T/R

NXP Semiconductors
PACKAGE OUTLINE
1995 Apr 25
N-channel dual-gate MOS-FET
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
1.35
1.15
E
B
1.3
e
scale
EIAJ
6
1
1.15
e 1
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
Preliminary specification
0.1
y
BF908WR
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R