BF545C,215 NXP Semiconductors, BF545C,215 Datasheet - Page 5

• Manufacturer Part Number: BF545C,215
• Description: JFET N-CHAN 30V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF545C,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 25mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 30 V
• Mounting Style: SMD/SMT
• Channel Type: N
• Gate-source Voltage (max): -30V
• Pin Count: 3
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1966-2; 933912920215; BF545C T/R

Philips Semiconductors
8. Dynamic characteristics
Table 8:
T
9397 750 13391
Product data sheet
Symbol
C
C
g
g
g
g
amb
Fig 2. Drain current as a function of gate-source
is
fs
rs
os
iss
rss
(mA)
I
= 25 C unless otherwise specified.
DSS
30
20
10
0
V
cut-off voltage; typical values.
0
DS
Parameter
input capacitance
reverse transfer capacitance
common source input
conductance
common source transfer
conductance
common source reverse
conductance
common source output
conductance
Dynamic characteristics
= 15 V; T
2
j
= 25 C.
4
6
V
GSoff
mbb467
Conditions
V
V
V
V
V
V
(V)
DS
DS
DS
DS
DS
DS
V
V
V
V
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
GS
GS
GS
GS
Rev. 03 — 5 August 2004
= 15 V; f = 1 MHz
= 15 V; f = 1 MHz
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
8
= 10 V
= 0 V
= 10 V
= 0 V
D
D
D
D
= 1 mA
= 1 mA
= 1 mA
= 1 mA
BF545A; BF545B; BF545C
Fig 3. Forward transfer admittance as a function of
N-channel silicon junction field-effect transistors
(mS)
Y
fs
5.5
4.5
6
5
4
V
gate-source cut-off voltage; typical values.
0
DS
= 15 V; V
2
GS
Min
-
-
-
-
-
-
-
-
-
-
-
-
= 0 V; T
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4
j
= 25 C.
Typ
1.7
3
0.8
0.9
15
300
2
1.8
30
60
6
40
6
V
Max
-
-
-
-
-
-
-
-
-
-
-
-
GSoff
mbb466
(V)
8
Unit
pF
pF
pF
pF
mS
mS
S
S
S
S
S
S
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