BF992,215 NXP Semiconductors, BF992,215 Datasheet - Page 5
![MOSFET NCH DUAL GATE 20V SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF992,215
Manufacturer Part Number
BF992,215
Description
MOSFET NCH DUAL GATE 20V SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BF992215.pdf
(9 pages)
Specifications of BF992,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
20V
Current Rating
40mA
Noise Figure
1.2dB
Current - Test
15mA
Voltage - Test
10V
Configuration
Single Dual Gate
Continuous Drain Current
0.04 A
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Application
VHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
20V
Noise Figure (max)
1.2(Typ)dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
4@10V@Gate 1/1.7@10V@Gate 2pF
Output Capacitance (typ)@vds
2@10VpF
Reverse Capacitance (typ)
0.03@10VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1971-2
933615000215
BF992 T/R
933615000215
BF992 T/R
NXP Semiconductors
handbook, halfpage
handbook, halfpage
Silicon N-channel dual gate MOS-FET
V
V
Fig.5
G2-S
DS
(mA)
(mS)
I D
|y fs |
= 10 V; T
Fig.3 Output characteristics; typical values.
= 4 V; T
24
20
16
12
30
20
10
8
4
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
j
j
= 25 C.
= 25 C.
2
V G2-S = 0 V
4
10
6
8
I D (mA)
V G1-S = 0.2 V
V DS (V)
10
0 V
0.1 V
1 V
MGE797
MGE798
0.1 V
0.2 V
0.3 V
0.4 V
0.5 V
0.6 V
Rev. 04 - 21 November 2007
12
20
5 V
4 V
3 V
2 V
handbook, halfpage
handbook, halfpage
V
V
Fig.6
DS
DS
(mA)
(mS)
I D
Fig.4 Transfer characteristics; typical values.
Y fs
= 10 V; T
= 10 V; T
30
20
10
30
20
10
0
0
1
1
Forward transfer admittance as a function
of gate 1-source voltage; typical values.
j
j
= 25 C.
= 25 C.
V G2-S = 5 V
0
0
V G1-S (V)
V G1-S (V)
Product specification
4 V 3 V
1 V
0 V
2 V
MGE799
MGE800
BF992
V G2-S =
5 of 9
1
1
5 V
4 V
3 V
2 V
1 V
0 V