BF862,215 NXP Semiconductors, BF862,215 Datasheet - Page 2

• Manufacturer Part Number: BF862,215
• Description: JFET N-CHAN 20V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF862,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 20V
• Current Rating: 25mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 20 V
• Gate-source Breakdown Voltage: - 20 V
• Continuous Drain Current: 40 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 20 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1968-2; 934055519215; BF862 T/R

NXP Semiconductors
FEATURES
 High transition frequency for excellent sensitivity in
 High transfer admittance.
APPLICATIONS
 Pre-amplifiers in AM car radios.
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
QUICK REFERENCE DATA
2000 Jan 05
V
V
I
P
y
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
DSS
AM car radios
j
DS
GSoff
tot
N-channel junction FET
fs
SYMBOL

drain-source voltage
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
junction temperature
PARAMETER
CAUTION
2
PINNING SOT23
handbook, halfpage
Marking code: 2Ap.
PIN
Top view
1
2
3
T
CONDITIONS
s
 90 C
Fig.1 Simplified outline and symbol.
2
source
drain
gate
3

0.3
10

35

MIN.
1
DESCRIPTION

0.8


45

TYP.
MAM036
Product specification
g
20
1.2
25
300

150
MAX.
BF862
V
V
mA
mW
mS
C
UNIT
d
s