ATF-55143-TR1G Avago Technologies US Inc., ATF-55143-TR1G Datasheet - Page 18

• Manufacturer Part Number: ATF-55143-TR1G
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-55143-TR1G

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.7dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.4dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 270 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 100mA
• Power Dissipation Pd: 270mW
• Noise Figure Typ: 0.6dB
• No. Of Pins: 4
• Dc Current Gain Min (hfe): 17.7
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1573-2

Noise Parameter Applications Information
F
ments while the F
lated. The F
figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measure‑
ments, a true F
minimum noise figure of the device when the device is
presented with an impedance matching network that
transforms the source impedance, typically 50Ω, to an
impedance represented by the reflection coefficient Γ
The designer must design a matching network that will
present Γ
losses. The noise figure of the completed amplifier is
equal to the noise figure of the device plus the losses of
the matching network preceding the device. The noise
figure of the device is equal to F
is presented with Γ
matching network is other than Γ
ure of the device will be greater than F
following equation.
NF = F
Where R
the optimum reflection coefficient required to produce
F
impedance actually presented to the device. The losses
of the matching networks are non‑zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. Γ
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower Γ
18
min
min
values at 2 GHz and higher are based on measure‑
and Γ
min
o
n
as compared to narrower gate width devices.
+
o
/Z
s
to the device with minimal associated circuit
is the reflection coefficient of the source
o
min
4 R
Zo (|1 + Γ
is the normalized noise resistance, Γ
min
values are based on a set of 16 noise
n
mins
is calculated. F
o
. If the reflection coefficient of the
|Γ
below 2 GHz have been extrapo‑
s
o
– Γ
|
2
)(1 ‑ |Γ
o
|
2
min
s
|
min
2
only when the device
)
o
, then the noise fig‑
represents the true
o
min
is typically fairly
based on the
o
is
o
.
Typically for FETs, the higher Γ
impedance much higher than 50Ω is required for the
device to produce F
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching
to such a high impedance requires very hi‑Q compo‑
nents in order to minimize circuit losses. As an example
at 900 MHz, when airwound coils (Q > 100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using multilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound
coil. Losses as high as 0.5 dB or greater add to the typi‑
cal 0.15 dB F
figure of nearly 0.65 dB. A discussion concerning cal‑
culated and measured circuit losses and their effect on
amplifier noise figure is covered in Avago Technologies
Application 1085.
min
of the device creating an amplifier noise
min
. At VHF frequencies and even
o
usually infers that an