ATF-55143-BLKG Avago Technologies US Inc., ATF-55143-BLKG Datasheet - Page 4
![IC PHEMT 2GHZ 2.7V 10MA SOT-343](/photos/5/63/56358/atf-55143-blkg_sml.jpg)
ATF-55143-BLKG
Manufacturer Part Number
ATF-55143-BLKG
Description
IC PHEMT 2GHZ 2.7V 10MA SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-55143-TR2G.pdf
(21 pages)
Specifications of ATF-55143-BLKG
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
17.7dB
Voltage - Rated
5V
Current Rating
100mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
2.7V
Power - Output
14.4dBm
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Power Dissipation
270 mW
Drain Source Voltage Vds
5 V
Gate-source Breakdown Voltage
- 5 V to 1 V
Continuous Drain Current
100 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 5 V to 1 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
100mA
Power Dissipation Pd
270mW
Noise Figure Typ
0.6dB
Rf Transistor Case
SC-70
No. Of Pins
4
Frequency Max
6GHz
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1869
ATF-55143-BLKG
ATF-55143-BLKG
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-55143-BLKG
Manufacturer:
AVAGO
Quantity:
100 000
Part Number:
ATF-55143-BLKG
Manufacturer:
AVGO
Quantity:
20 000
ATF-55143 Typical Performance Curves
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I
4
Figure 6. Gain vs. Bias over Frequency.
Figure 9. IIP3 vs. Bias over Frequency.
Figure 12. Fmin vs. I
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
at 2.7 V, 10 mA bias. This circuit represents a trade‑off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de‑embedded from actual measurements.
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V
as a P1dB of +14.5 dBm is approached.
30
25
20
15
10
15
10
-5
5
5
0
0
0
0
5
1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
I
15
ds
ds
(mA)
3
3
and V
20
ds
4
4
25
at 2 GHz.
2V, 10 mA
2.7V, 10 mA
2V, 10 mA
2.7V, 10 mA
5
5
30
2V
2.7V
3V
[1]
[1]
35
6
6
Figure 7. Fmin vs. Frequency and Bias.
Figure 10. P1dB vs. Bias over Frequency.
Figure 13. OIP3 vs. I
1.2
1.0
0.8
0.6
0.4
0.2
16
14
12
10
35
33
31
29
27
25
23
21
19
0
8
0
0
0
5
1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
I
15
ds
ds
(mA)
3
3
and V
20
ds
4
4
25
at 2 GHz.
2V, 10 mA
2.7V, 10 mA
2V, 10 mA
2.7V, 10 mA
dsq
5
5
30
2V
2.7V
3V
, is set with zero RF drive applied. As P1dB is approached,
[1]
[1,2]
35
6
6
DS
= 2.7V and I
Figure 8. OIP3 vs. Bias over Frequency.
Figure 11. Gain vs. I
Figure 14. IIP3 vs. I
27
25
23
21
19
17
15
21
20
19
18
17
16
15
16
14
12
10
8
6
4
2
0
0
0
0
dsq
, the device is running close to class
5
5
1
dsq
= 5 mA, I
10
10
FREQUENCY (GHz)
2
I
I
ds
15
15
ds
ds
ds
(mA)
d
(mA)
and V
3
and V
increases to 15 mA
20
20
ds
ds
4
at 2 GHz.
25
25
at 2 GHz.
2V, 10 mA
2.7V, 10 mA
5
30
30
2V
2.7V
3V
2V
2.7V
3V
[1]
[1]
[1]
35
35
6