BLF175,112 NXP Semiconductors, BLF175,112 Datasheet - Page 2

• Manufacturer Part Number: BLF175,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF175,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 20dB
• Voltage - Rated: 125V
• Current Rating: 4A
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 30W
• Power Gain (typ)@vds: 44@50V/24@50V/20@50VdB
• Frequency (max): 108MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 130@50VpF
• Output Capacitance (typ)@vds: 36@50VpF
• Reverse Capacitance (typ): 3.7@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class B/Class-A/Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2400; 933939780112; BLF175; BLF175

Philips Semiconductors
FEATURES
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
The transistor has a 4-lead, SOT123A
flange package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (V
for matched pair applications. Refer
to the handbook 'General' section for
further information.
PINNING - SOT123A
QUICK REFERENCE DATA
RF performance at T
Note
1. 2-tone efficiency.
2003 Jul 22
class-A
class-AB
CW, class-B
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch
Gold metallization ensures
excellent reliability.
HF/VHF power MOS transistor
PIN
1
2
3
4
OPERATION
MODE OF
drain
source
gate
source
GS
) information is provided
DESCRIPTION
h
= 25 C in a common source test circuit.
(MH
108
28
28
f
Z
)
ook, halfpage
PIN CONFIGURATION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
V
(V)
50
50
50
DS
1
2
(mA)
800
150
I
30
DQ
2
Fig.1 Simplified outline and symbol.
30 (PEP)
8 (PEP)
(W)
P
30
MSB057
L
4
3
WARNING
CAUTION
typ. 24
typ. 20
(dB)
G
24
p
typ. 40
typ. 65
Product specification
(%)
D
(1)
g
MBB072
BLF175
typ. 35
d
s
(dB)
d
40
3