BLF177,112 NXP Semiconductors, BLF177,112 Datasheet - Page 3

• Manufacturer Part Number: BLF177,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Forward Transconductance Gfs (max / Min): 6.2 S, 4.5 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2386; 933930010112; BLF177; BLF177

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
V
V
I
P
T
T
R
R
handbook, halfpage
SYMBOL
SYMBOL
D
stg
j
DS
GS
tot
HF/VHF power MOS transistor
th j-mb
th mb-h
(1) Current in this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
2
1
1
= 25 C.
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
(1)
Fig.2 DC SOAR.
10
PARAMETER
(2)
10
2
DSon
V DS (V)
.
PARAMETER
MRA906
10
Rev. 06 - 24 January 2007
3
T
mb
25 C
CONDITIONS
handbook, halfpage
(1) Short-time operation during mismatch.
(2) Continuous operation.
P tot
(W)
300
200
100
0
0
Fig.3 Power derating curves.
50
65
MIN.
max. 0.8
max. 0.2
VALUE
(1)
(2)
100
125
16
220
+150
200
Product specification
20
MAX.
T h ( C)
BLF177
MGP089
3 of 19
UNIT
150
K/W
K/W
V
V
A
W
C
C
UNIT