BLF6G20LS-140,118 NXP Semiconductors, BLF6G20LS-140,118 Datasheet - Page 63

• Manufacturer Part Number: BLF6G20LS-140,118
• Description: IC BASESTATION FINAL SOT896B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-140,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.93GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 35.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 39 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060897118; BLF6G20LS-140 /T3; BLF6G20LS-140 /T3

N-channel, dual-gate MOSFETs for switching (continued)
(2)
(3)
(4)
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/fets
(1)
Product
BF1203
BF1204
BF1205C
BF1205
BF1206
BF1207
BF1208
BF1210
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
Coss
Cig
Two equal dual-gate MOSFETs in one package
V
GS (th)
(5)
(5)
(5) (6) (7)
(5)
(5) (7) (8)
(5) (6) (7)
(11) (12)
(5) (6) (7)
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT363
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
V
(V)
10
10
10
10
6
6
7
6
6
6
6
6
6
6
6
6
6
6
6
6
6
DS
(5)
(6)
(7)
Two low-noise gain amplifiers in one package
Transistor A: fully internal bias,
transistor B: partly internal bias
Internal switching function
(mA)
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
I
D
Min
11
14
14
13
14
14
11
11
11
8
8
9
8
8
9
8
9
9
8
8
8
(mA)
I
DSS
Max
19
16
16
24
17
16
16
23
17
23
18
24
17
24
17
19
19
19
16
16
16
Min
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
(p)GS
(V)
(8)
Transistor A: partly internal bias, transistor B:
fully internal bias
1.2
1.2
1.2
Max
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(1)
(1)
(1)
30 typ
32 typ
Min
23
25
25
26
28
26
26
33
29
26
28
26
28
25
25
25
28
28
28
Characteristics
(mS)
|Yfs|
Max
35
40
41
43
40
40
48
44
41
43
41
43
40
40
40
43
43
43
(pF)
Typ
Cis
2.6
1.7
1.7
2.2
1.8
2.4
1.7
2.2
2.2
2.2
2.1
2.1
2.1
1.7
1.7
1.7
2
2
2
2
2
0.85
0.85
0.85
0.75
0.85
0.85
0.85
0.75
0.85
0.85
Cos
(pF)
Typ
0.9
0.9
1.1
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
F @ 800
MHz
Typ
1.9
1.1
1.1
1.4
1.4
1.2
1.4
1.6
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
VHF
•
•
•
•
•
•
•
•
•
•
•
UHF
•
•
•
•
•
•
•
•
•
•
•
•
6