BLF6G20LS-140,118 NXP Semiconductors, BLF6G20LS-140,118 Datasheet - Page 74

• Manufacturer Part Number: BLF6G20LS-140,118
• Description: IC BASESTATION FINAL SOT896B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20LS-140,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.93GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 35.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 39 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060897118; BLF6G20LS-140 /T3; BLF6G20LS-140 /T3

RF
1-GHz basestations (continued)
74
Product
BLF6G21-6
BLF3G21-30
BLF3G21-6
BLF1046
BLF1822-10
BLF1043
BGF802-20
BGF844
BGF944
Package
SOT538A
SOT467C
SOT538A
SOT467C
SOT467C
SOT538A
SOT365C
SOT365C
SOT365C
Mode of operation
CW
2-Tone
PHS class A
2-Tone
PHS class A
CW
CW
CW
CW
CDMA
CW
EDGE
CW
EDGE
800-4000
HF - 2200
HF - 2200
HF - 1000
HF - 2200
HF - 1000
869 - 894
869 - 894
920 - 960
2.5
2.5
30
50
12
10
25
23
17
6
9
6
2
3
TBD
13.5
13.5
18.5
16
16
16
13
30
30
30
10
35
20
35
20
60
40
55
50
18
50
16
50
16
-45
-26
-23
-48
-69
-65
-65
-75
-75
0.4
0.4
TBD
1.60
1.87
10
5
9