BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 4

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
7. Application information
BLF871_BLF871S_4
Product data sheet
Table 7.
T
[1]
[2]
Mode of operation
2-tone, class AB
DVB-T (8k OFDM)
h
Fig 1.
= 25
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
°
C unless otherwise specified.
V
Output capacitance as a function of drain-source voltage; typical values
GS
RF performance in a common-source narrowband 860 MHz test circuit
= 0 V; f = 1 MHz.
Rev. 04 — 19 November 2009
C
f
(MHz)
f
f
858
(pF)
1
2
oss
160
120
= 860;
= 860.1
80
40
0
0
V
(V)
40
40
DS
20
I
(A) (W)
0.5 100
0.5 -
Dq
P
L(PEP)
40
BLF871; BLF871S
P
(W)
-
24
L(AV)
V
DS
001aaj276
(V)
UHF power LDMOS transistor
G
(dB) (%)
> 19 > 44 < −30
> 19 > 30 < −31
p
60
η
D
© NXP B.V. 2010. All rights reserved.
IMD3
(dBc)
[1]
PAR
(dB)
-
> 7.8
4 of 19
[2]