BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 10

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
Notes
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality.
2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass
3. L22 is soldered on to stripline L21.
2003 Sep 19
L17, L18
L19, L20
L21, L23
L22
R1
R2, R7
R3, R6
R4, R5
R8, R9
R10
R11
IC1
T1
COMPONENT
VHF push-pull power MOS transistor
PTFE dielectric (
stripline; note 2
stripline; note 2
stripline; note 2
semi-rigid cable; note 3
metal film resistor
10 turn potentiometer
metal film resistor
metal film resistor
metal film resistor
metal film resistor
metal film resistor
voltage regulator 78L05
1:1 Balun; 7 turns type 4C6 50
coaxial cable wound around toroid
r
= 2.2), thickness
DESCRIPTION
1
16
inch; thickness of copper sheet 2
10
43
43
50
50
10 , 0.4 W
50 k
3
parallel, 0.4 W
10 ; 0.4 W
10
4
parallel, 1 W
5.11 k
12.1
10
VALUE
5%, 1 W
1 W
in
in
35 m.
length 24.5 mm
width 6 mm
length 66 mm
width 6 mm
length 160 mm
width 4.8 mm
ext. dia. 3.6 mm
outer conductor
length 160 mm
14
DIMENSIONS
9
5 mm
Product Specification
4322 020 90770
CATALOGUE NO.
BLF278